N-Channel Power MOSFET, 30V Vds, 11.6A Continuous Drain Current (ID), and 10mΩ Max Drain-Source On-Resistance (Rds On). Features low 7mΩ Drain-Source Resistance, 1.289nF Input Capacitance, and 7.04ns Turn-On Delay Time. Operates from -55°C to 150°C with 1.43W Max Power Dissipation. Packaged in a GREEN, PLASTIC, SOP-8 (SOIC) surface mount package, supplied on tape and reel. RoHS and REACH SVHC compliant.
Diodes DMG8880LSS-13 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 11.6A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 7mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 10MR |
| Fall Time | 19.67ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.289nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.43W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 10mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 36.13ns |
| Turn-On Delay Time | 7.04ns |
| Weight | 0.00261oz |
| RoHS | Compliant |
Download the complete datasheet for Diodes DMG8880LSS-13 to view detailed technical specifications.
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