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Technical Specifications
Diodes DMG9N65CT technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Resistance | 1.3R |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 28ns |
| FET Type | 1 N-Channel |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 2.31nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 165W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 1.3R |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 122ns |
| Turn-On Delay Time | 39ns |
| Weight | 0.08113oz |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMG9N65CT Datasheet
Download the complete datasheet for Diodes DMG9N65CT to view detailed technical specifications.
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