N-channel silicon power MOSFET featuring 650V drain-source voltage and 9A continuous drain current. This through-hole component offers a low 1.3 ohm drain-source resistance (Rds On Max) and a maximum power dissipation of 13W. Designed with a TO-220-3 package, it operates across a wide temperature range from -55°C to 150°C, with typical turn-on delay of 39ns and fall time of 28ns.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Diodes DMG9N65CTI technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Resistance | 1.3R |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 28ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16.07mm |
| Input Capacitance | 2.31nF |
| Length | 16.07mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 13W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 1.3R |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 122ns |
| Turn-On Delay Time | 39ns |
| Weight | 0.08113oz |
| Width | 4.9mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMG9N65CTI Datasheet
Download the complete datasheet for Diodes DMG9N65CTI to view detailed technical specifications.
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