
Surface mount N-channel and P-channel MOSFET with 30V drain-source voltage and 4.2A continuous drain current. Features low 25mΩ drain-source resistance and 2V threshold voltage. Operates from -55°C to 150°C with a maximum power dissipation of 1.5W. Packaged in SOIC-8 for tape and reel distribution.
Diodes DMHC3025LSD-13 technical specifications.
| Package/Case | SO |
| Continuous Drain Current (ID) | 4.2A |
| Drain to Source Resistance | 80mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 13.5ns |
| FET Type | 2 N and 2 P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 590pF |
| Lead Free | Lead Free |
| Length | 4.95mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Mount | Surface Mount |
| Number of Channels | 4 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Rds On Max | 25mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 28.2ns |
| Turn-On Delay Time | 7.5ns |
| Weight | 0.00261oz |
| Width | 3.95mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes DMHC3025LSD-13 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
