
PNP silicon bipolar junction transistor in a 6-lead plastic SOT-363 package. Features a continuous collector current of -200mA, a collector-emitter breakdown voltage of 40V, and a transition frequency of 250MHz. Offers a minimum hFE of 100 and a collector-emitter saturation voltage of -400mV. Designed for surface mounting with a maximum power dissipation of 200mW.
Diodes DMMT3906W-7 technical specifications.
| Package/Case | SOT-363 |
| Collector Base Voltage (VCBO) | -40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | -400mV |
| Collector-emitter Voltage-Max | 400mV |
| Continuous Collector Current | -200mA |
| Current Rating | -200mA |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 250MHz |
| Height | 1mm |
| hFE Min | 100 |
| Lead Free | Contains Lead |
| Length | 2.2mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 200mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Cut Tape |
| Polarity | PNP |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | No |
| Transition Frequency | 250MHz |
| DC Rated Voltage | -40V |
| Weight | 0.000212oz |
| Width | 1.35mm |
| RoHS | Not Compliant |
Download the complete datasheet for Diodes DMMT3906W-7 to view detailed technical specifications.
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