PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 150V Collector-Emitter Breakdown Voltage (V(BR)CEO) and a 200mA Continuous Collector Current (I(C)). Operates with a 300MHz Gain Bandwidth Product and Transition Frequency. Housed in a 6-lead PLASTIC PACKAGE (SOT-26) for surface mounting. Rated for -55°C to 150°C operating temperature range.
PackageSOT-26
Current Rating-200mA
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes DMMT5401-7 technical specifications.
General
| Package/Case | SOT-26 |
| Collector Base Voltage (VCBO) | 160V |
| Collector Emitter Breakdown Voltage | 150V |
| Collector-emitter Voltage-Max | 500mV |
| Continuous Collector Current | -200mA |
| Current Rating | -200mA |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 300MHz |
| Height | 1.1mm |
| hFE Min | 50 |
| Lead Free | Contains Lead |
| Length | 3mm |
| Max Breakdown Voltage | 150V |
| Max Collector Current | 200mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | No |
| Transition Frequency | 300MHz |
| DC Rated Voltage | -150V |
| Weight | 0.001058oz |
| Width | 1.6mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Diodes DMMT5401-7 Datasheet
Download the complete datasheet for Diodes DMMT5401-7 to view detailed technical specifications.
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