PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 150V Collector Emitter Breakdown Voltage (VCEO) and a 200mA maximum collector current. Operates with a 300MHz transition frequency and a minimum hFE of 60. Packaged in a compact SOT-26 surface mount plastic package, this lead-free component offers a wide operating temperature range from -55°C to 150°C.
Frequency300MHz
PackageSOT-26
Current Rating-200mA
MountingSurface Mount
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Technical Specifications
Diodes DMMT5401-7-F technical specifications.
General
| Package/Case | SOT-26 |
| Collector Base Voltage (VCBO) | 160V |
| Collector Emitter Breakdown Voltage | 150V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Emitter Voltage (VCEO) | 150V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | -200mA |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 300MHz |
| Height | 1.1mm |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Breakdown Voltage | 150V |
| Max Collector Current | 200mA |
| Max Frequency | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 300MHz |
| DC Rated Voltage | -150V |
| Weight | 0.001058oz |
| Width | 1.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMMT5401-7-F Datasheet
Download the complete datasheet for Diodes DMMT5401-7-F to view detailed technical specifications.
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