Dual NPN bipolar junction transistor in SOT-26 package, featuring a 160V collector-emitter breakdown voltage and 200mA continuous collector current. Offers a 300MHz gain bandwidth product and 50 minimum hFE. Operates from -55°C to 150°C with a maximum power dissipation of 300mW. Surface mountable and supplied on tape and reel.
PackageSOT-26
Current Rating200mA
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes DMMT5551-7 technical specifications.
General
| Package/Case | SOT-26 |
| Collector Base Voltage (VCBO) | 180V |
| Collector Emitter Breakdown Voltage | 160V |
| Collector-emitter Voltage-Max | 200mV |
| Continuous Collector Current | 200mA |
| Current Rating | 200mA |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 300MHz |
| Height | 1.1mm |
| hFE Min | 50 |
| Lead Free | Contains Lead |
| Length | 3mm |
| Max Breakdown Voltage | 160V |
| Max Collector Current | 200mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Reach SVHC Compliant | No |
| RoHS Compliant | No |
| Transition Frequency | 300MHz |
| DC Rated Voltage | 180V |
| Weight | 0.001058oz |
| Width | 1.6mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Diodes DMMT5551-7 Datasheet
Download the complete datasheet for Diodes DMMT5551-7 to view detailed technical specifications.
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