NPN silicon bipolar junction transistor for small signal applications. Features a 160V collector-emitter breakdown voltage and 200mA maximum collector current. Offers a 300MHz gain bandwidth product and low 200mV collector-emitter saturation voltage. Packaged in a compact SOT-26 surface-mount plastic package, operating from -55°C to 150°C.
Frequency300MHz
PackageSOT-26
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes DMMT5551S-7-F technical specifications.
General
| Package/Case | SOT-26 |
| Collector Base Voltage (VCBO) | 180V |
| Collector Emitter Breakdown Voltage | 160V |
| Collector Emitter Saturation Voltage | 200mV |
| Collector-emitter Voltage-Max | 200mV |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 300MHz |
| Height | 1.1mm |
| Length | 3mm |
| Max Breakdown Voltage | 160V |
| Max Collector Current | 200mA |
| Max Frequency | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 300MHz |
| Weight | 0.001058oz |
| Width | 1.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMMT5551S-7-F Datasheet
Download the complete datasheet for Diodes DMMT5551S-7-F to view detailed technical specifications.
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