N-Channel Power MOSFET, designed for surface mount applications, features a 100V drain-source voltage and a continuous drain current of 12A. This silicon Metal-oxide Semiconductor FET offers a low 140mΩ drain-source resistance and a maximum power dissipation of 42W. Operating across a wide temperature range from -55°C to 150°C, it is packaged in a TO-252-3 (DPAK) and supplied on tape and reel. The component is lead-free, RoHS compliant, and REACH SVHC compliant.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
Power42W
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Technical Specifications
Diodes DMN10H170SK3-13 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Resistance | 140mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 12.8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.167nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 42W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 42W |
| Rds On Max | 140mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 42.6ns |
| Turn-On Delay Time | 10.5ns |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMN10H170SK3-13 Datasheet
Download the complete datasheet for Diodes DMN10H170SK3-13 to view detailed technical specifications.
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