N-Channel Power MOSFET featuring 150V drain-source voltage and 2A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 0.31 ohms. Designed with a single element and four terminals, it utilizes a DUAL terminal position configuration.
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Technical Specifications
Diodes DMN15H310SE-13 technical specifications.
General
| Number of Terminals | 4 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Diodes DMN15H310SE-13 Datasheet
Download the complete datasheet for Diodes DMN15H310SE-13 to view detailed technical specifications.
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