N-channel silicon Metal-oxide Semiconductor FET (MOSFET) for surface mounting in a SOT-23 package. Features a 20V Drain-Source Voltage (Vdss), 630mA Continuous Drain Current (ID), and a maximum Drain-Source On Resistance (Rds On) of 550mR. Operates within a temperature range of -65°C to 150°C with a maximum power dissipation of 350mW. Includes a nominal Gate-Source Voltage (Vgs) of 1.6V and input capacitance of 150pF.
PackageSOT-23
MountingSurface Mount
PolarityN-CHANNEL
Power350mW
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Technical Specifications
Diodes DMN2004K-7 technical specifications.
General
Package/Case
SOT-23
Continuous Drain Current (ID)
630mA
Drain to Source Resistance
550mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
550mR
Fall Time
37.6ns
Gate to Source Voltage (Vgs)
8V
Height
1mm
Input Capacitance
150pF
Lead Free
Lead Free
Length
2.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
350mW
Mount
Surface Mount
Nominal Vgs
1.6V
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
350mW
Radiation Hardening
No
Rds On Max
550mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
1.6V
Turn-Off Delay Time
59.4ns
Turn-On Delay Time
5.7ns
Weight
0.000282oz
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Diodes DMN2004K-7 Datasheet
Download the complete datasheet for Diodes DMN2004K-7 to view detailed technical specifications.
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