N-Channel Silicon Metal-Oxide Semiconductor FET (MOSFET) for surface mount applications. Features a continuous drain current of 540mA and a drain-to-source voltage of 20V. Offers a low drain-source on-resistance of 550mR. Operates within a temperature range of -65°C to 150°C with a maximum power dissipation of 200mW. Packaged in a compact SOT-323 plastic package, suitable for tape and reel distribution.
Diodes DMN2004WK-7 technical specifications.
| Package/Case | SOT-323 |
| Continuous Drain Current (ID) | 540mA |
| Current Rating | 540mA |
| Drain to Source Resistance | 550mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 550mR |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1mm |
| Input Capacitance | 150pF |
| Lead Free | Lead Free |
| Length | 2.15mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 200mW |
| Rds On Max | 550mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101 |
| DC Rated Voltage | 20V |
| Weight | 0.000212oz |
| Width | 1.3mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes DMN2004WK-7 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
