N-channel, 1-element, silicon Metal-oxide Semiconductor Field-Effect Transistor (MOSFET) designed for surface mount applications. Features a 20V drain-to-source voltage (Vdss) and a continuous drain current (ID) of 440mA. Offers a low drain-to-source on-resistance (Rds On) of 1.5 Ohms. Packaged in an ultra-small DFN1006 plastic enclosure with dimensions of 1mm length, 0.6mm width, and 0.47mm height. Operates across a temperature range of -65°C to 150°C with a maximum power dissipation of 450mW. This component is RoHS and REACH SVHC compliant.
PackageDFN
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes DMN2005LPK-7 technical specifications.
General
| Package/Case | DFN |
| Continuous Drain Current (ID) | 440mA |
| Drain to Source Resistance | 1.5R |
| Drain to Source Voltage (Vdss) | 20V |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 0.47mm |
| Length | 1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 450mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 1.5R |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Width | 0.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMN2005LPK-7 Datasheet
Download the complete datasheet for Diodes DMN2005LPK-7 to view detailed technical specifications.
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