N-channel, dual JFET transistor for surface mount applications. Features a 20V drain-source voltage (Vdss) and a continuous drain current (ID) of 7.5A. Offers low on-resistance (Rds On Max) of 15.5mΩ and fast switching speeds with a turn-on delay time of 6.9ns and fall time of 12ns. Housed in a compact DFN package with dimensions of 2.05mm (L) x 3.05mm (W) x 0.6mm (H). Operates across a wide temperature range from -55°C to 150°C.
PackageDFN
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Diodes DMN2016LHAB-7 technical specifications.
General
| Package/Case | DFN |
| Continuous Drain Current (ID) | 7.5A |
| Drain to Source Resistance | 30mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 12ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.6mm |
| Input Capacitance | 1.55nF |
| Length | 2.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.2W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 15.5mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 40.9ns |
| Turn-On Delay Time | 6.9ns |
| Width | 3.05mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMN2016LHAB-7 Datasheet
Download the complete datasheet for Diodes DMN2016LHAB-7 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.