N-Channel Metal-oxide Semiconductor FET, a surface mount transistor in a TSSOP package, features a 20V Drain to Source Voltage (Vdss) and a continuous drain current (ID) of 5.4A. It offers a low Drain-source On Resistance-Max of 18.5mR, with a Gate to Source Voltage (Vgs) of 12V. This dual-channel device boasts a 53ns turn-on delay time and 234ns fall time, operating within a temperature range of -55°C to 150°C. The component is RoHS and Lead Free compliant.
PackageTSSOP
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes DMN2019UTS-13 technical specifications.
General
| Package/Case | TSSOP |
| Continuous Drain Current (ID) | 5.4A |
| Drain to Source Resistance | 24mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 18.5mR |
| Fall Time | 234ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 143pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 780mW |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 18.5mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 562ns |
| Turn-On Delay Time | 53ns |
| Weight | 0.005573oz |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMN2019UTS-13 Datasheet
Download the complete datasheet for Diodes DMN2019UTS-13 to view detailed technical specifications.
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