N-channel enhancement mode Power MOSFET featuring a 20V drain-source voltage and 6.7A continuous drain current. This dual common drain, dual source configured component is housed in an 8-pin TSSOP package with gull-wing leads for surface mounting. Key electrical characteristics include a maximum drain-source resistance of 26 mOhm at 4.5V, typical gate charge of 5.2 nC at 4.5V, and typical input capacitance of 570 pF at 10V. Operating temperature range spans from -55°C to 150°C.
PackageTSSOP
MountingSurface Mount
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Technical Specifications
Diodes DMN2040LTS technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOP
Package/Case
TSSOP
Package Description
Thin Shrink Small Outline Package
Lead Shape
Gull-wing
Pin Count
8
PCB
8
Package Length (mm)
3.03
Package Width (mm)
4.43
Package Height (mm)
0.93
Seated Plane Height (mm)
1.2(Max)
Pin Pitch (mm)
0.65
Package Material
Plastic
Mounting
Surface Mount
Configuration
Dual Common Drain Dual Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Maximum Drain Source Voltage
20V
Maximum Gate Source Voltage
±12V
Maximum Continuous Drain Current
6.7A
Maximum Drain Source Resistance
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
570@10VpF
Maximum Power Dissipation
890mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
6M0U4
EU RoHS
Yes
HTS Code
8541210095
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU
Datasheet
Diodes DMN2040LTS Datasheet
Download the complete datasheet for Diodes DMN2040LTS to view detailed technical specifications.
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