N-Channel JFET, surface mount, featuring 20V drain-source voltage (Vdss) and 760mA continuous drain current (ID). This silicon FET offers a low drain-source on-resistance (Rds On) of 600mR, with a maximum of 990mR. Key switching parameters include a 3.5ns turn-on delay and 19.6ns turn-off delay, with a 9.8ns fall time. Housed in a compact X1-DFN1006-3 package, it operates from -55°C to 150°C and is RoHS and REACH SVHC compliant.
PackageDFN
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes DMN21D2UFB-7B technical specifications.
General
| Package/Case | DFN |
| Continuous Drain Current (ID) | 760mA |
| Drain to Source Resistance | 600mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 9.8ns |
| FET Type | 1 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.48mm |
| Input Capacitance | 27.6pF |
| Lead Free | Lead Free |
| Length | 1.08mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 380mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 990mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 19.6ns |
| Turn-On Delay Time | 3.5ns |
| Width | 0.675mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMN21D2UFB-7B Datasheet
Download the complete datasheet for Diodes DMN21D2UFB-7B to view detailed technical specifications.
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