N-Channel Silicon Metal-oxide Semiconductor FET for small signal applications. Features a 20V Drain to Source Voltage (Vdss) and 750mA Continuous Drain Current (ID). Offers a low Drain to Source Resistance (Rds On) of 550mR. Operates within a temperature range of -55°C to 150°C. Packaged in a compact DFN surface mount configuration.
PackageDFN
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes DMN2400UFB4-7 technical specifications.
General
| Package/Case | DFN |
| Continuous Drain Current (ID) | 750mA |
| Drain to Source Resistance | 550mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 9.6ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.35mm |
| Input Capacitance | 36pF |
| Lead Free | Lead Free |
| Length | 1.08mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 470mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 550mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 14.8ns |
| Turn-On Delay Time | 4.11ns |
| Width | 0.675mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMN2400UFB4-7 Datasheet
Download the complete datasheet for Diodes DMN2400UFB4-7 to view detailed technical specifications.
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