
N-channel enhancement mode power MOSFET, surface mountable in a 3-pin X1-DFN package with dimensions 1.2mm x 1.2mm x 0.48mm. Features a maximum drain-source voltage of 20V and a continuous drain current of 0.9A. Offers a low gate threshold voltage of 1V and a maximum drain-source on-resistance of 600mΩ at 4.5V. Operates within a temperature range of -55°C to 150°C.
Diodes DMN2400UFD-7 technical specifications.
| Basic Package Type | Non-Lead-Frame SMT |
| Package Family Name | DFN |
| Package/Case | X1-DFN |
| Lead Shape | No Lead |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 1.2 |
| Package Width (mm) | 1.2 |
| Package Height (mm) | 0.48 |
| Seated Plane Height (mm) | 0.5 |
| Pin Pitch (mm) | 0.4 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Source Voltage | ±12V |
| Maximum Continuous Drain Current | 0.9A |
| Maximum Gate Threshold Voltage | 1V |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | 37@16VpF |
| Maximum Power Dissipation | 800mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | 6M0U4 |
| EU RoHS | Yes |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Diodes DMN2400UFD-7 to view detailed technical specifications.
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