N-Channel Silicon Metal-oxide Semiconductor FET, 2-Element, Small Signal Field-Effect Transistor with 20V Drain to Source Voltage (Vdss) and 1.33A Continuous Drain Current (ID). Features 480mR Max Drain-source On Resistance (Rds On) and 900mV Threshold Voltage. Operates from -55°C to 150°C with 530mW Power Dissipation. Surface mountable in a compact SOT-563 plastic package, supplied on tape and reel.
PackageSOT-563
MountingSurface Mount
PolarityN-CHANNEL
Power530mW
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Technical Specifications
Diodes DMN2400UV-7 technical specifications.
General
Package/Case
SOT-563
Continuous Drain Current (ID)
1.33A
Drain to Source Resistance
1.5R
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
500mR
Fall Time
10.54ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
12V
Height
0.6mm
Input Capacitance
36pF
Lead Free
Lead Free
Length
1.7mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
530mW
Mount
Surface Mount
Number of Channels
2
Number of Elements
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
530mW
Radiation Hardening
No
Rds On Max
480mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
900mV
Turn-Off Delay Time
13.74ns
Turn-On Delay Time
4.06ns
Weight
0.000106oz
Width
1.25mm
Compliance
RoHS
Compliant
Datasheet
Diodes DMN2400UV-7 Datasheet
Download the complete datasheet for Diodes DMN2400UV-7 to view detailed technical specifications.
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