N-Channel Silicon Metal-oxide Semiconductor FET, 2-Element, Small Signal Field-Effect Transistor with 20V Drain to Source Voltage (Vdss) and 1.33A Continuous Drain Current (ID). Features 480mR Max Drain-source On Resistance (Rds On) and 900mV Threshold Voltage. Operates from -55°C to 150°C with 530mW Power Dissipation. Surface mountable in a compact SOT-563 plastic package, supplied on tape and reel.
PackageSOT-563
MountingSurface Mount
PolarityN-CHANNEL
Power530mW
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Technical Specifications
Diodes DMN2400UV-7 technical specifications.
General
| Package/Case | SOT-563 |
| Continuous Drain Current (ID) | 1.33A |
| Drain to Source Resistance | 1.5R |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 500mR |
| Fall Time | 10.54ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.6mm |
| Input Capacitance | 36pF |
| Lead Free | Lead Free |
| Length | 1.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 530mW |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 530mW |
| Radiation Hardening | No |
| Rds On Max | 480mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 900mV |
| Turn-Off Delay Time | 13.74ns |
| Turn-On Delay Time | 4.06ns |
| Weight | 0.000106oz |
| Width | 1.25mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMN2400UV-7 Datasheet
Download the complete datasheet for Diodes DMN2400UV-7 to view detailed technical specifications.
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