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Technical Specifications
Diodes DMN2501UFB4-7B technical specifications.
General
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Source Voltage | ±8V |
| Maximum Continuous Drain Current | 1.5A |
| Maximum Gate Threshold Voltage | 1V |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Gate Charge @ Vgs | [email protected]|2@10VnC |
| Typical Gate Charge @ 10V | 2nC |
| Typical Input Capacitance @ Vds | 82@16VpF |
| Maximum Power Dissipation | 1200mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 6M0U4 |
| EU RoHS | Yes |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Diodes DMN2501UFB4-7B Datasheet
Download the complete datasheet for Diodes DMN2501UFB4-7B to view detailed technical specifications.
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