N-channel MOSFET with 30V drain-source voltage and 16A continuous drain current. Features low 9mΩ drain-source on-resistance and 5.6ns turn-on delay. Operates from -55°C to 150°C with 2.5W maximum power dissipation. Packaged in a surface-mount SOP-8 plastic case, this silicon Metal-oxide Semiconductor FET is RoHS compliant.
PackageSOP
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes DMN3010LSS-13 technical specifications.
General
| Package/Case | SOP |
| Continuous Drain Current (ID) | 16A |
| Drain to Source Resistance | 9mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 27ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 2.096nF |
| Length | 5.3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 9mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 5.6ns |
| Weight | 0.030018oz |
| Width | 4.1mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMN3010LSS-13 Datasheet
Download the complete datasheet for Diodes DMN3010LSS-13 to view detailed technical specifications.
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