N-Channel MOSFET, 30V Drain-Source Voltage (Vdss) and 14.4A Continuous Drain Current (ID). Features low 24mΩ Drain-to-Source Resistance (Rds On Max) and 2.17W Max Power Dissipation. This silicon Metal-Oxide-Semiconductor FET is designed for surface mounting in a TO-252-3 (DPAK) package. Offers fast switching with 2.9ns Turn-On Delay and 16ns Turn-Off Delay. RoHS and REACH SVHC compliant.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes DMN3024LK3-13 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 14.4A |
| Drain to Source Resistance | 24mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 8ns |
| FET Type | 1 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 608pF |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.17W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 24mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 2.9ns |
| Weight | 0.139332oz |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMN3024LK3-13 Datasheet
Download the complete datasheet for Diodes DMN3024LK3-13 to view detailed technical specifications.
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