N-Channel Silicon Metal-oxide Semiconductor FET, 2-Element, Surface Mount, SOP-8 package. Features 30V Drain to Source Voltage (Vdss), 7.2A Continuous Drain Current (ID), and 24mΩ Drain to Source Resistance (Rds On Max). Offers fast switching with 2.9ns Turn-On Delay Time and 8ns Fall Time. Operates from -55°C to 150°C with a Max Power Dissipation of 1.8W.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes DMN3024LSD-13 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 7.2A |
| Drain to Source Resistance | 24mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 8ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 608pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 24mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 2.9ns |
| Weight | 0.00261oz |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMN3024LSD-13 Datasheet
Download the complete datasheet for Diodes DMN3024LSD-13 to view detailed technical specifications.
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