N-Channel Silicon Metal-oxide Semiconductor FET for surface mount applications. Features 30V Drain to Source Breakdown Voltage (Vdss) and 30V Gate to Source Voltage (Vgs). Offers a low 24mR Drain to Source Resistance (Rds On Max) and 8.5A Continuous Drain Current (ID). Includes fast switching characteristics with a 2.9ns Turn-On Delay Time and 8ns Fall Time. Operates across a wide temperature range from -55°C to 150°C.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes DMN3024LSS-13 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 8.5A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 24mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 8ns |
| FET Type | 1 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 608pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 24mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 2.9ns |
| Weight | 0.00261oz |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMN3024LSS-13 Datasheet
Download the complete datasheet for Diodes DMN3024LSS-13 to view detailed technical specifications.
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