
N-Channel MOSFET, 30V Vdss, 9A continuous drain current, and 18.5mΩ Rds On. Features a 4ns turn-on delay and 9.4ns fall time, with a maximum power dissipation of 2.5W. This surface-mount silicon component operates from -55°C to 150°C and is packaged in a GREEN, PLASTIC SOP-8 (SOIC) case.
Diodes DMN3031LSS-13 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Resistance | 18.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 9.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 741pF |
| Length | 4.95mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 18.5mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 4ns |
| Weight | 0.01787oz |
| Width | 3.95mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes DMN3031LSS-13 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
