N-channel MOSFET, 30V drain-source voltage, 6.9A continuous drain current, and 33mΩ maximum drain-source on-resistance. Features 11ns turn-on delay, 63ns turn-off delay, and 30ns fall time. This surface-mount silicon component operates from -55°C to 150°C, with a maximum power dissipation of 2W. Packaged in a 6-lead plastic SOT-23 package.
PackageSOT-23-6
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes DMN3033LDM-7 technical specifications.
General
Package/Case
SOT-23-6
Continuous Drain Current (ID)
6.9A
Drain to Source Resistance
25mR
Drain to Source Voltage (Vdss)
30V
Fall Time
30ns
Gate to Source Voltage (Vgs)
20V
Height
1.1mm
Input Capacitance
755pF
Lead Free
Lead Free
Length
3mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
33mR
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Turn-Off Delay Time
63ns
Turn-On Delay Time
11ns
Width
1.6mm
Compliance
RoHS
Compliant
Datasheet
Diodes DMN3033LDM-7 Datasheet
Download the complete datasheet for Diodes DMN3033LDM-7 to view detailed technical specifications.
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