DIODES

DMN3033LSD-13

Datasheet

N-Channel MOSFET, 30V, 6.9A, 22mR, SOP, 2-Element

Diodes

DMN3033LSD-13

Name: DMN3033LSD-13 Diodes
Brand: Diodes
SKU: DMN3033LSD-13

N-Channel MOSFET, 30V, 6.9A, 22mR, SOP, 2-Element

N-Channel Power MOSFET, 30V Drain-Source Voltage, 6.9A Continuous Drain Current, and 22mΩ Max Drain-Source On-Resistance. This dual-element silicon Metal-Oxide-Semiconductor Field-Effect Transistor features a 2-element N-Channel configuration, a 20V Gate-to-Source Voltage, and a 150°C Max Operating Temperature. Packaged in a surface-mount SOP with dimensions of 5.3mm length, 4.1mm width, and 1.5mm height, it offers a 2W Max Power Dissipation and is RoHS and REACH SVHC compliant.

PackageSOP

MountingSurface Mount

PolarityN-CHANNEL

Power2W

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Technical Specifications

Diodes DMN3033LSD-13 technical specifications.

General

Package/Case	SOP
Continuous Drain Current (ID)	6.9A
Drain to Source Resistance	22mR
Drain to Source Voltage (Vdss)	30V
Drain-source On Resistance-Max	22mR
Fall Time	30ns
FET Type	2 N-Channel
Gate to Source Voltage (Vgs)	20V
Height	1.5mm
Input Capacitance	725pF
Lead Free	Lead Free
Length	5.3mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	2W
Mount	Surface Mount
Number of Channels	2
Number of Elements	2
Package Quantity	2500
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	2W
Radiation Hardening	No
Rds On Max	20mR
Reach SVHC Compliant	Yes
RoHS Compliant	Yes
Turn-Off Delay Time	63ns
Turn-On Delay Time	11ns
Weight	0.030018oz
Width	4.1mm