N-Channel MOSFET, 30V Drain-Source Voltage, 5.4A Continuous Drain Current, and 32mΩ Drain-Source On-Resistance. This silicon Metal-Oxide Semiconductor FET features a single element and is housed in a 3-pin SOT-23-3 surface-mount plastic package. With a maximum power dissipation of 1.4W and an operating temperature range of -55°C to 150°C, it offers a 12V Gate-Source Voltage rating and 555pF input capacitance. This component is RoHS and REACH SVHC compliant.
PackageSOT-23-3
MountingSurface Mount
PolarityN-CHANNEL
Power1.4W
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Technical Specifications
Diodes DMN3052L-7 technical specifications.
General
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 5.4A |
| Drain to Source Resistance | 32mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 32MR |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1mm |
| Input Capacitance | 555pF |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.4W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.4W |
| Radiation Hardening | No |
| Rds On Max | 32mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Weight | 0.000282oz |
| Width | 1.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMN3052L-7 Datasheet
Download the complete datasheet for Diodes DMN3052L-7 to view detailed technical specifications.
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