N-Channel Silicon Metal-oxide Semiconductor FET, 2-Element, Surface Mount, SOIC package. Features 40V Drain to Source Voltage (Vdss), 5.4A Continuous Drain Current (ID), and 27mΩ Drain to Source Resistance (Rds On Max). Operates with a Gate to Source Voltage (Vgs) up to 20V, offering fast switching with a 3.1ns Turn-On Delay Time and 7.5ns Fall Time. Maximum Power Dissipation is 1.8W, with operating temperatures from -55°C to 150°C.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes DMN4027SSD-13 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 5.4A |
| Drain to Source Resistance | 27mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 7.5ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 604pF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 27mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 15.4ns |
| Turn-On Delay Time | 3.1ns |
| Weight | 0.00261oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMN4027SSD-13 Datasheet
Download the complete datasheet for Diodes DMN4027SSD-13 to view detailed technical specifications.
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