N-channel, depletion mode, small signal field-effect transistor designed for general-purpose switching and amplification applications. Features low on-resistance and high input impedance, enabling efficient signal control. Operates with a low gate-source threshold voltage for ease of driving from low-voltage logic. Suitable for use in battery-powered devices and portable electronics due to its low power consumption.
Diodes DMN53D0LDW-13 technical specifications.
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
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