N-Channel Silicon MOSFET, 60V Vdss, 5.3A Continuous Drain Current. Features 30mΩ Drain to Source Resistance, 6.6ns Turn-On Delay, and 20.1ns Turn-Off Delay. Operates from -55°C to 150°C with a maximum power dissipation of 660mW. Packaged in a compact U-DFN2020-6 surface-mount plastic housing, this component is lead-free and RoHS compliant.
Diodes DMN6040SFDE-7 technical specifications.
| Package/Case | DFN |
| Continuous Drain Current (ID) | 5.3A |
| Drain to Source Resistance | 30mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 4ns |
| FET Type | 1 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.58mm |
| Input Capacitance | 1.287nF |
| Lead Free | Lead Free |
| Length | 2.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 660mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 38mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 20.1ns |
| Turn-On Delay Time | 6.6ns |
| Width | 2.05mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes DMN6040SFDE-7 to view detailed technical specifications.
No datasheet is available for this part.
