N-Channel Silicon Metal-Oxide Semiconductor FET, SOP-8 package, offering 60V drain-source voltage and 3.3A continuous drain current. Features low 80mΩ drain-source resistance and 588pF input capacitance. Operates across a -55°C to 150°C temperature range with a maximum power dissipation of 1.5W. Includes 2 N-Channel elements, surface mount capability, and RoHS compliance.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes DMN6070SSD-13 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.3A |
| Drain to Source Resistance | 70mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 11ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 588pF |
| Length | 4.95mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 80mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 3.5ns |
| Weight | 0.00261oz |
| Width | 3.95mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMN6070SSD-13 Datasheet
Download the complete datasheet for Diodes DMN6070SSD-13 to view detailed technical specifications.
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