
N-Channel Junction Field-Effect Transistor (JFET) for small signal applications. Features 60V drain-to-source voltage (Vdss) and 410mA continuous drain current (ID). Offers low 1.4 Ohm drain-to-source resistance (Rds On Max) and fast switching speeds with turn-on delay of 3.89ns and fall time of 11.96ns. Packaged in an ultra-small DFN1006-3 surface-mount plastic package, this RoHS compliant component operates from -55°C to 150°C.
Diodes DMN62D1SFB-7B technical specifications.
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