N-Channel Junction Field-Effect Transistor (JFET) for small signal applications. Features 60V drain-to-source voltage (Vdss) and 410mA continuous drain current (ID). Offers low 1.4 Ohm drain-to-source resistance (Rds On Max) and fast switching speeds with turn-on delay of 3.89ns and fall time of 11.96ns. Packaged in an ultra-small DFN1006-3 surface-mount plastic package, this RoHS compliant component operates from -55°C to 150°C.
PackageDFN
MountingSurface Mount
PolarityN-CHANNEL
Power470mW
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Technical Specifications
Diodes DMN62D1SFB-7B technical specifications.
General
Package/Case
DFN
Continuous Drain Current (ID)
410mA
Drain to Source Resistance
1.4R
Drain to Source Voltage (Vdss)
60V
Fall Time
11.96ns
FET Type
1 N-Channel
Gate to Source Voltage (Vgs)
20V
Input Capacitance
80pF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
470mW
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
10000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
470mW
Radiation Hardening
No
Rds On Max
1.4R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
DMN62
Turn-Off Delay Time
18.8ns
Turn-On Delay Time
3.89ns
Compliance
RoHS
Compliant
Datasheet
Diodes DMN62D1SFB-7B Datasheet
Download the complete datasheet for Diodes DMN62D1SFB-7B to view detailed technical specifications.
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