N-Channel Silicon Metal-oxide Semiconductor FET, 2-Element, Surface Mount transistor with a 30V Drain to Source Voltage (Vdss) and 260mA Continuous Drain Current (ID). Features a 2.8 Ohm Drain to Source Resistance (Rds On Max) and a 1.5V Threshold Voltage. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 300mW. Packaged in a SOT-363, tape and reel for surface mounting.
PackageSOT-363
MountingSurface Mount
PolarityN-CHANNEL
Power400mW
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Technical Specifications
Diodes DMN63D8LDW-7 technical specifications.
General
Package/Case
SOT-363
Continuous Drain Current (ID)
260mA
Drain to Source Resistance
2.8R
Drain to Source Voltage (Vdss)
30V
Fall Time
6.3ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Height
1mm
Input Capacitance
22pF
Lead Free
Lead Free
Length
2.2mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300mW
Mount
Surface Mount
Number of Channels
2
Number of Elements
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
400mW
Radiation Hardening
No
Rds On Max
2.8R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
1.5V
Turn-Off Delay Time
12ns
Turn-On Delay Time
3.3ns
Weight
0.000212oz
Width
1.35mm
Compliance
RoHS
Compliant
Datasheet
Diodes DMN63D8LDW-7 Datasheet
Download the complete datasheet for Diodes DMN63D8LDW-7 to view detailed technical specifications.
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