
N-channel enhancement mode MOSFET, 60V drain-source voltage, 0.31A continuous drain current. Features 3000mOhm maximum drain-source resistance at 10V and a 2V maximum gate threshold voltage. Packaged in a 3-pin SOT-23 (TO-236AA) lead-frame SMT with gull-wing leads, suitable for surface mounting. Operating temperature range from -55°C to 150°C.
Diodes DMN65D8L-7 technical specifications.
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOT-23 |
| Package/Case | SOT-23 |
| Package Description | Small Outline Transistor |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 2.9 |
| Package Width (mm) | 1.3 |
| Package Height (mm) | 0.98 |
| Seated Plane Height (mm) | 1.03 |
| Pin Pitch (mm) | 0.92 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | TO-236AA |
| Configuration | Single |
| Category | Small Signal |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 0.31A |
| Maximum Gate Threshold Voltage | 2V |
| Maximum Drain Source Resistance | 3000@10VmOhm |
| Typical Gate Charge @ Vgs | 0.87@10V|[email protected]nC |
| Typical Gate Charge @ 10V | 0.87nC |
| Typical Input Capacitance @ Vds | 22@25VpF |
| Maximum Power Dissipation | 540mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | 6M0U4 |
| EU RoHS | Yes |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Diodes DMN65D8L-7 to view detailed technical specifications.
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