N-Channel Silicon Metal-oxide Semiconductor FET, 2-Element, Surface Mount, SOT-363 package. Features 60V Drain to Source Voltage (Vdss), 180mA Continuous Drain Current (ID), and 6 Ohm maximum Drain-source On Resistance (Rds On). Operates from -55°C to 150°C with 300mW maximum power dissipation. Includes 3.3ns turn-on delay and 12ns turn-off delay.
PackageSOT-363
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes DMN65D8LDW-7 technical specifications.
General
| Package/Case | SOT-363 |
| Continuous Drain Current (ID) | 180mA |
| Drain to Source Resistance | 8R |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 6R |
| Fall Time | 6.3ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 22pF |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 6R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 12ns |
| Turn-On Delay Time | 3.3ns |
| Weight | 0.000212oz |
| Width | 1.35mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMN65D8LDW-7 Datasheet
Download the complete datasheet for Diodes DMN65D8LDW-7 to view detailed technical specifications.
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