N-channel silicon MOSFET featuring 60V drain-source voltage and 8.2A continuous drain current. This dual-terminal, 2-element power field-effect transistor offers a low on-resistance of 0.025 ohms. Designed for efficient power switching applications.
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Technical Specifications
Diodes DMNH6021SPDQ-13 technical specifications.
General
| Number of Terminals | 6 |
| Terminal Position | DUAL |
| Number of Elements | 2 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Diodes DMNH6021SPDQ-13 Datasheet
Download the complete datasheet for Diodes DMNH6021SPDQ-13 to view detailed technical specifications.
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