P-channel, silicon, metal-oxide semiconductor FET for small signal applications. Features a continuous drain current of 9.1A and a drain-to-source voltage of 12V. Offers a low on-resistance of 46mR at 10V. This surface mount device operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 2.03W. Packaged in a compact U-DFN2020-6, 6-pin format.
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Diodes DMP1022UFDE-7 technical specifications.
General
| Continuous Drain Current (ID) | 9.1A |
| Drain to Source Resistance | 46mR |
| Drain to Source Voltage (Vdss) | 12V |
| Fall Time | 93ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.58mm |
| Input Capacitance | 2.953nF |
| Lead Free | Lead Free |
| Length | 2.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.03W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 16mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 117ns |
| Turn-On Delay Time | 20ns |
| Width | 2.05mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMP1022UFDE-7 Datasheet
Download the complete datasheet for Diodes DMP1022UFDE-7 to view detailed technical specifications.
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