
Small Signal Field-Effect Transistor, 2.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, DFN2015H4-3, 3 PIN
Diodes DMP2069UFY4-7 technical specifications.
| Package/Case | DFN |
| Continuous Drain Current (ID) | 2.5A |
| Drain to Source Resistance | 36mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 423.8ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 214pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 530mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 54mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 688.1ns |
| Turn-On Delay Time | 80.4ns |
| RoHS | Compliant |
Download the complete datasheet for Diodes DMP2069UFY4-7 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
