
P-channel MOSFET featuring 20V drain-source voltage and 3.8A continuous drain current. This surface-mount device offers a low 70mΩ drain-to-source resistance. With a 2-element configuration, it operates across a wide temperature range from -55°C to 150°C and has a maximum power dissipation of 1.4W. The component is housed in a compact DFN2020B-6 plastic package.
Diodes DMP2160UFDB-7 technical specifications.
| Package/Case | DFN |
| Continuous Drain Current (ID) | 3.8A |
| Drain to Source Resistance | 70mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 12.09ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.75mm |
| Input Capacitance | 536pF |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.4W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.4W |
| Radiation Hardening | No |
| Rds On Max | 70mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 55.34ns |
| Turn-On Delay Time | 11.51ns |
| Width | 2mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes DMP2160UFDB-7 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
