P-channel MOSFET featuring 20V drain-source voltage and 3.8A continuous drain current. This surface-mount device offers a low 70mΩ drain-to-source resistance. With a 2-element configuration, it operates across a wide temperature range from -55°C to 150°C and has a maximum power dissipation of 1.4W. The component is housed in a compact DFN2020B-6 plastic package.
PackageDFN
MountingSurface Mount
PolarityP-CHANNEL
Power1.4W
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Technical Specifications
Diodes DMP2160UFDB-7 technical specifications.
General
Package/Case
DFN
Continuous Drain Current (ID)
3.8A
Drain to Source Resistance
70mR
Drain to Source Voltage (Vdss)
20V
Fall Time
12.09ns
Gate to Source Voltage (Vgs)
12V
Height
0.75mm
Input Capacitance
536pF
Lead Free
Lead Free
Length
2mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.4W
Mount
Surface Mount
Number of Channels
2
Number of Elements
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1.4W
Radiation Hardening
No
Rds On Max
70mR
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Turn-Off Delay Time
55.34ns
Turn-On Delay Time
11.51ns
Width
2mm
Compliance
RoHS
Compliant
Datasheet
Diodes DMP2160UFDB-7 Datasheet
Download the complete datasheet for Diodes DMP2160UFDB-7 to view detailed technical specifications.
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