DMP21D5UFD-7

P-channel enhancement mode power MOSFET featuring a 20V drain-source voltage and 0.6A continuous drain current. This single-element transistor is housed in a compact 1.2mm x 1.2mm x 0.48mm X1-DFN surface-mount package with 3 pins. Key specifications include a maximum gate-source voltage of ±8V, a gate threshold voltage of 1V, and a low drain-source on-resistance of 1000mΩ at 4.5V. Typical gate charge is 0.8nC at 8V, and input capacitance is 46.1pF at 10V. Maximum power dissipation is 800mW, with an operating temperature range of -55°C to 150°C.