P-channel, 1-element, silicon, metal-oxide semiconductor FET designed for surface mounting in a SOT-323 package. Features a continuous drain current of 1.5A, drain-to-source voltage of 20V, and a maximum power dissipation of 250mW. Offers a low drain-to-source resistance of 150mR. Operates across a wide temperature range from -55°C to 150°C. Includes fast switching characteristics with turn-on delay time of 12.5ns and fall time of 10.3ns.
Diodes DMP2240UW-7 technical specifications.
| Package/Case | SOT-323 |
| Continuous Drain Current (ID) | 1.5A |
| Drain to Source Resistance | 150mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 10.3ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1mm |
| Input Capacitance | 320pF |
| Length | 2.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 150mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 46.5ns |
| Turn-On Delay Time | 12.5ns |
| Weight | 0.000212oz |
| Width | 1.35mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes DMP2240UW-7 to view detailed technical specifications.
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