DMP22D6UT-7

P-channel JFET for small signal applications, featuring a 20V drain-to-source voltage (Vdss) and 430mA continuous drain current (ID). This silicon FET offers a low drain-to-source resistance of 700mR and a gate-to-source voltage (Vgs) of 8V. Packaged in a compact SOT-523 surface-mount plastic case, it operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 150mW. Compliant with RoHS and REACH SVHC standards.