P-channel JFET for small signal applications, featuring a 20V drain-to-source voltage (Vdss) and 430mA continuous drain current (ID). This silicon FET offers a low drain-to-source resistance of 700mR and a gate-to-source voltage (Vgs) of 8V. Packaged in a compact SOT-523 surface-mount plastic case, it operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 150mW. Compliant with RoHS and REACH SVHC standards.
PackageSOT-523
MountingSurface Mount
PolarityP-CHANNEL
Power150mW
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Technical Specifications
Diodes DMP22D6UT-7 technical specifications.
General
| Package/Case | SOT-523 |
| Continuous Drain Current (ID) | 430mA |
| Drain to Source Resistance | 700mR |
| Drain to Source Voltage (Vdss) | 20V |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.75mm |
| Input Capacitance | 175pF |
| Length | 1.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| Rds On Max | 1.1R |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Weight | 7.1E-05oz |
| Width | 0.8mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMP22D6UT-7 Datasheet
Download the complete datasheet for Diodes DMP22D6UT-7 to view detailed technical specifications.
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