P-channel, Metal-oxide Semiconductor FET (MOSFET) designed for small signal applications. Features a continuous drain current of 6.8A and a drain-to-source voltage (Vdss) of 30V. Offers a low on-resistance (Rds On Max) of 32mΩ at a gate-to-source voltage (Vgs) of 20V. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 660mW. This surface-mount component is supplied in tape and reel packaging.
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Diodes DMP3028LFDE-13 technical specifications.
General
| Continuous Drain Current (ID) | 6.8A |
| Drain to Source Resistance | 60mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 40.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.241nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 660mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 32mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 60.5ns |
| Turn-On Delay Time | 9.7ns |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMP3028LFDE-13 Datasheet
Download the complete datasheet for Diodes DMP3028LFDE-13 to view detailed technical specifications.
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