
P-Channel MOSFET, 30V Drain-Source Voltage, 7.1A Continuous Drain Current, and 45mΩ Maximum Drain-Source On-Resistance. This silicon Metal-Oxide Semiconductor FET features a 1-element configuration and is housed in a surface-mount SOP package with dimensions of 5.3mm length, 4.1mm width, and 1.5mm height. Operating across a temperature range of -55°C to 150°C, it offers a maximum power dissipation of 2.5W and is RoHS compliant.
Diodes DMP3056LSS-13 technical specifications.
| Package/Case | SOP |
| Continuous Drain Current (ID) | 7.1A |
| Drain to Source Resistance | 45mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 45mR |
| Fall Time | 14.7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 722pF |
| Lead Free | Lead Free |
| Length | 5.3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 45mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 26.5ns |
| Turn-On Delay Time | 6.4ns |
| Weight | 0.030018oz |
| Width | 4.1mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes DMP3056LSS-13 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.