
P-Channel Silicon Metal-oxide Semiconductor FET designed for small signal applications. Features a continuous drain current of 3.9A and a drain-to-source voltage of 30V. This surface mount device offers a low Rds On of 70mR, with turn-on delay time of 4.8ns and fall time of 14.6ns. Operating temperature range spans from -55°C to 150°C, with a maximum power dissipation of 1.1W. Packaged in tape and reel, this RoHS and REACH SVHC compliant component is housed in a plastic SOP-8 package.
Diodes DMP3085LSD-13 technical specifications.
| Package/Case | SO |
| Continuous Drain Current (ID) | 3.9A |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 14.6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 563pF |
| Lead Free | Lead Free |
| Length | 4.95mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 70mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 31ns |
| Turn-On Delay Time | 4.8ns |
| Width | 3.95mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes DMP3085LSD-13 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
