
P-channel silicon Metal-oxide Semiconductor FET (MOSFET) for surface mounting in an SOP package. Features a 30V drain-to-source voltage, 4.4A continuous drain current, and a low 65mΩ Rds On. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 1.8W. Includes 2 elements and 2 channels, with typical fall and turn-on times of 5ns and 6ns respectively.
Diodes DMP3098LSD-13 technical specifications.
| Package/Case | SOP |
| Continuous Drain Current (ID) | 4.4A |
| Drain to Source Resistance | 115mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 336pF |
| Length | 5.3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.8W |
| Radiation Hardening | No |
| Rds On Max | 65mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 17.6ns |
| Turn-On Delay Time | 6ns |
| Weight | 0.00261oz |
| Width | 4.1mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes DMP3098LSD-13 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
