
P-channel, single-element silicon JFET for surface mount applications. Features a 30V drain-source voltage (Vdss) and 250mA continuous drain current (ID). Offers a low drain-source on-resistance (Rds On) of 2.4 Ohms. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 300mW. Packaged in a compact SOT-323 plastic package, supplied on tape and reel.
Diodes DMP32D4SW-7 technical specifications.
| Package/Case | SOT-323 |
| Continuous Drain Current (ID) | 250mA |
| Drain to Source Resistance | 2.4R |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 21.9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 51.16pF |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 2.4R |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 31.8ns |
| Turn-On Delay Time | 9.86ns |
| Weight | 0.000212oz |
| Width | 1.35mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes DMP32D4SW-7 to view detailed technical specifications.
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